Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications. (November 2016)

• Record Type: Journal Article
• Authors: Gatensby, Riley; Hallam, Toby; Lee, Kangho; McEvoy, Niall; Duesberg, Georg S.
• Is Part Of: Solid-state electronics. Volume 125(2016)
• Page Start: 39
• Page End: 51
• Publication Date: 2016-11
• Subjects: 2D Semiconductors -- Transition metal dichalcogenides (TMDs) -- Thermally assisted conversion (TAC) -- Hybrid devices -- Sensors -- Photodiodes; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.07.021
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Two-dimensional (2D) transitional metal dichalcogenides (TMDs) are of major interest to the research and electrical engineering community. A number of TMDs are semiconducting and have a wide range of bandgaps, they can exhibit n- or p-type behaviour, and the electronic structure changes with the number of layers. These exceptional properties hold much promise for a host of electrical applications including low- or high power field-effect transistors, sensors and diodes. Moreover, the unique optical properties of TMDs make them attractive for optoelectronic applications such as light-emitting diodes, photodiodes, and photovoltaic cells. A prerequisite for all of these applications is a synthesis route which is well controlled, scalable, reproducible and compatible with semiconductor industry process flows. Thermally assisted conversion (TAC), a variant of chemical vapour deposition, shows much promise for meeting these requirements. Herein we review the current progress and challenges of research on 2D semiconducting materials for electronics with a special focus on TAC produced TMD thin films.