UTBB FDSOI: Evolution and opportunities. (November 2016)

• Record Type: Journal Article
• Authors: Monfray, Stephane; Skotnicki, Thomas
• Is Part Of: Solid-state electronics. Volume 125(2016)
• Page Start: 63
• Page End: 72
• Publication Date: 2016-11
• Subjects: FDSOI -- Thin Body -- Thin BOX -- Back biasing -- IoT -- Sensors -- 3D integration; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.07.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: As today's 28 nm FDSOI (Fully Depleted Silicon On Insulator) technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also new opportunities, among logic applications and extending the possibilities offered by the platform. We will summarize how the advantages provided by the thin BOX have been first explored and developed, and how the back biasing techniques are the key to the outstanding performances provided by the FDSOI at low voltage. Then, as the FDSOI technology is also a solution to develop innovative platforms and applications, we will detail some opportunities. In particular, we will present monolithic 3D integration, ultra-low power devices for IoT (Internet of Things) and ultra-sensitive sensors.