Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures. (January 2019)
- Record Type:
- Journal Article
- Title:
- Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures. (January 2019)
- Main Title:
- Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures
- Authors:
- Cabrera-German, D.
García-Valenzuela, J.A.
Cota-Leal, M.
Martínez-Gil, M.
Aceves, R.
Sotelo-Lerma, M. - Abstract:
- Abstract: A process for the chemical deposition of good-quality SnS thin films is presented. This process consists of a careful substrate sensitization; the placement of the substrate in a particular angle in the reaction solution; and the use of an aqueous reaction solution composed of stannous chloride, ethanol, triethanolamine, thioacetamide, and ammonium hydroxide. This process enables the deposition of good-quality SnS thin films that are homogenous and strongly adhered to the substrate, even at a temperature of 70 °C. The effect of reaction temperature (40, 45, 50, 55, 60, 65, and 70 °C) on the properties of the SnS thin films was studied by means of X-ray diffraction (including a Rietveld analysis), scanning electron microscopy, X-ray photoelectron spectroscopy, optical spectroscopy, and current photo-response. Rietveld analysis shows the presence of two tin sulfide orthorhombic phases ( α -SnS and β -SnS) and a platelet-like microstructure with less than 20% of the total volume oriented in the (111) plane. Surface morphology confirms that grains have platey-like habits. It is found that with increasing reaction temperature the thin films increase in thickness, become more crystalline, and the conductivity photo-response improves, making the prepared SnS thin films suitable for optoelectronic applications.
- Is Part Of:
- Materials science in semiconductor processing. Volume 89(2019)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 89(2019)
- Issue Display:
- Volume 89, Issue 2019 (2019)
- Year:
- 2019
- Volume:
- 89
- Issue:
- 2019
- Issue Sort Value:
- 2019-0089-2019-0000
- Page Start:
- 131
- Page End:
- 142
- Publication Date:
- 2019-01
- Subjects:
- Tin sulfide -- Chemical bath deposition -- Quantitative XPS -- Thin films -- Rietveld refinement -- Deposition temperature
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2018.09.009 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
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