Implications of electron beam irradiation on Al/n-Si Schottky junction properties. (December 2018)

• Record Type: Journal Article
• Authors: Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.; Dwivedi, Jishnu; Phase, D.M.; Choudhary, R.J.
• Is Part Of: Microelectronics and reliability. Volume 91(2018)Part 1
• Page Start: 179
• Page End: 184
• Publication Date: 2018-12
• Subjects: Electron beam irradiation -- Schottky barrier height -- Interface traps -- XPS -- Effective work function -- Synchrotron; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.031
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB ), ideality factor (n), and series resistance (RS ) at different irradiation doses are caused due to the formation of Al2 O3 -SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing. Graphical abstract: Highlights: Electron beam induced modifications in the Al/n-Si Schottky junction properties are studied. Studies showed formation of Al2 O3 -SiO2 dielectric interface across the Al/n-Si junction. The technique can be applied for the device artifacts which use band lineup as a key design parameter.