Cite
MLA Citation
M. Reisinger et al.. “Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction.” Materials & design, vol. 106, 2016, pp. 476–481. http://access.bl.uk/ark:/81055/vdc_100070081202.0x000025