Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer. (May 2016)

• Record Type: Journal Article
• Authors: Qiao, Ming; Li, Chengzhou; Liu, Yihe; Wang, Yuru; Li, Zhaoji; Zhang, Bo
• Is Part Of: Superlattices and microstructures. Volume 93(2016)
• Page Start: 242
• Page End: 247
• Publication Date: 2016-05
• Subjects: Triple RESURF -- Breakdown voltage -- Specific on-resistance -- Partial linear variable doping -- N-type top layer; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.03.038
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: A novel triple reduced surface field (RESURF) lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) with partial linear variable doping (LVD) N-type top (N-top) layer is proposed in this paper. Compared with the conventional triple RESURF LDMOS, a partial LVD N-top layer is introduced in the surface of N-well, providing a low on-resistance conduction path and leading to an optimized surface electric field, which alleviates the inherent tradeoff between the breakdown voltage (BV) and specific on-resistance ( R on, sp ). With the n-drift region length of 70 μm, the novel triple RESURF LDMOS obtains a high BV of 847 V and a low R on, sp of 79 mΩ cm 2 which are 76 V higher and 46 mΩ cm 2 lower than those of the conventional triple RESURF LDMOS. Therefore, the novel triple RESURF LDMOS can greatly improve the tradeoff between BV and R on, sp . Furthermore, compared with the other existing technologies in the high BV level, the novel triple RESURF LDMOS can achieve a highest figure of merit (FOM, defined as BV 2 / R on, sp ) of 9.08 MW/cm 2 and the conventional RESURF silicon limits are broken. Highlights: A novel triple RESURF LDMOS with partial LVD N-top layer is proposed. A more uniform distribution of surface electric field is achieved. The optimized novel device obtains a BV of 847 V and a R on, sp of 79 mΩ cm 2 . The novel triple RESURF LDMOS can achieve a highest FOM of 9.08 MW/cm 2 .