Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem. (December 2015)

• Record Type: Journal Article
• Authors: Colalongo, Luigi; Ghittorelli, Matteo; Torricelli, Fabrizio; Kovács-Vajna, Zsolt Miklos
• Is Part Of: Solid-state electronics. Volume 114(2015)
• Page Start: 14
• Page End: 16
• Publication Date: 2015-12
• Subjects: OTFTs -- TFTs -- Surface potential -- Lagrange Reversion Theorem -- Circuit simulation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.06.012
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We show an explicit approach to calculate the surface potential of OTFTs. It is accurate, fast, and does not require numeric iterations. It enables the development of surface-potential-based OTFT models. It is important for circuit simulations. The surface potential is calculated by means of the Lagrange Reversion Theorem. Abstract: Surface-potential-based mathematical models are among the most accurate and physically based compact models of Thin-Film Transistors (TFTs) and, in turn, of Organic Thin-Film Transistors (OTFTs), available today. However, the need for iterative computations of the surface potential limits their computational efficiency and diffusion in CAD applications. The existing closed-form approximations of the surface potential are based on regional approximations and empirical smoothing functions that could result not enough accurate to model OTFTs and, in particular, transconductances and transcapacitances. In this paper we present an accurate and computationally efficient closed-form approximation of the surface potential, based on the Lagrange Reversion Theorem, that can be exploited in advanced surface-potential-based OTFTs and TFTs device models.