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APA Citation
Yuan, S., Duan, B., Cao, Z., Guo, H., & Yang, Y. (2016). analytical model of LDMOS with a double step buried oxide layer. Solid-state electronics, 123, 6–14. http://access.bl.uk/ark:/81055/vdc_100069744952.0x000037
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Yuan, S., Duan, B., Cao, Z., Guo, H., & Yang, Y. (2016). analytical model of LDMOS with a double step buried oxide layer. Solid-state electronics, 123, 6–14. http://access.bl.uk/ark:/81055/vdc_100069744952.0x000037