Cite
HARVARD Citation
Yuan, S. et al. (2016). Analytical model of LDMOS with a double step buried oxide layer. Solid-state electronics. pp. 6-14. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Yuan, S. et al. (2016). Analytical model of LDMOS with a double step buried oxide layer. Solid-state electronics. pp. 6-14. [Online].