Cite
MLA Citation
Vl. Kolkovsky et al.. “Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique.” Solid-state electronics, vol. 123, 2016, pp. 89–95. http://access.bl.uk/ark:/81055/vdc_100069744952.0x00002b