Dislocation scatterings in p-type Si1−xGex under weak electric field. (16th November 2015)

• Record Type: Journal Article
• Authors: Hur, Ji-Hyun; Jeon, Sanghun
• Is Part Of: Nanotechnology. Volume 26:Number 49(2015)
• Publication Date: 2015-11-16
• Subjects: silicon germanium -- dislocation -- epitaxy -- scattering -- mobility; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/49/495201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si1− x Ge x . The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T 3/2 / λ relation and is proportional to the germanium density x . We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc.