Ultraviolet detecting properties of amorphous MgInO thin film phototransistors. (6th November 2015)

• Record Type: Journal Article
• Authors: Lu, Huiling; Bi, Xiaobin; Zhang, Shengdong; Zhou, Hang
• Is Part Of: Semiconductor science and technology. Volume 30:Number 12(2015:Dec.)
• Publication Date: 2015-11-06
• Subjects: magnesium-doped indium oxide -- thin film transistors -- ultraviolet (UV) detecting; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/12/125010
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The ultraviolet (UV) detecting properties of Mg doped In2 O3 (MgInO or MIO) bottom gate thin film transistors (TFTs) were investigated. The optical measurements show that the introduction of Mg dopants effectively widens the optical band gap of In2 O3 . The cutoff wavelength of MIO films is pushed to deep UV as Mg content increases. Fabricated MIO TFTs with high Mg content demonstrate appraisable UV detecting properties with a dark current of 10 −14 A, a UV to visible rejection ratio of 10 3, a responsivity of 3.2 A/W (300 nm) and a cutoff wavelength of 320 nm, which can be put to good use in deep UV detection. The dynamic photo-response measurement shows that the persistent photo-conductivity (PPC) effect can be alleviated by imposing a transient positive gate pulse.