Cite
APA Citation
Padilla, J. L., Alper, C., Gámiz, F., & Ionescu, A. M. (n.d.). comment on 'Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'. Semiconductor science and technology, 30, . http://access.bl.uk/ark:/81055/vdc_100028693345.0x00005c