Cite
HARVARD Citation
Padilla, J. et al. (n.d.). Comment on 'Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'. Semiconductor science and technology. p. . [Online].
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Padilla, J. et al. (n.d.). Comment on 'Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'. Semiconductor science and technology. p. . [Online].