Spectral sensitivity of graphene/silicon heterojunction photodetectors. (January 2016)

• Record Type: Journal Article
• Authors: Riazimehr, Sarah; Bablich, Andreas; Schneider, Daniel; Kataria, Satender; Passi, Vikram; Yim, Chanyoung; Duesberg, Georg S.; Lemme, Max C.
• Is Part Of: Solid-state electronics. Volume 115 Part B(2016)
• Page Start: 207
• Page End: 212
• Publication Date: 2016-01
• Subjects: Graphene -- Molybdenum disulfide -- Schottky barrier diode -- Photodiode -- Responsivity -- Spectral response; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.08.023
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n-Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene – n-Si photodiodes show a considerable responsivity of 270 mA W −1 within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2 ) – p-type silicon photodiode.