Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays. (January 2016)

• Record Type: Journal Article
• Authors: Grossi, Alessandro; Zambelli, Cristian; Olivo, Piero; Miranda, Enrique; Stikanov, Valeriy; Walczyk, Christian; Wenger, Christian
• Is Part Of: Solid-state electronics. Volume 115 Part A(2016)
• Page Start: 17
• Page End: 25
• Publication Date: 2016-01
• Subjects: RRAM array -- Forming -- Read window -- Energy saving; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.10.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We compare different pulse-based forming techniques on 4 kbits RRAM arrays. We performed post-forming modeling during Reset operation. An Incremental Form and Verify technique ( IFV ) shown the best results. This technique narrows the read current distribution, reducing the switching voltage. This allows reducing cell-to-cell variability, switching time and energy. Abstract: The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells' performances. In this paper we characterize and compare different pulse forming techniques in terms of forming time, yield and cell-to-cell variability on 4 kbits RRAM arrays. Moreover, post-forming modeling during Reset operation of correctly working and over formed cells has been performed. An incremental form and verify technique, based on a sequence of trapezoidal waveforms with increasing voltages followed by a verify operation that terminates when the expected switching behavior has been achieved, showed the best results. This procedure narrows the post-forming current distribution whereas reducing the Reset switching voltage and the operative current. These advantages materialize in a better control of the cell-to-cell variability and in an overall time and energy saving at the system level.