Analytical approximation of the InGaZnO thin-film transistors surface potential. (October 2016)

• Record Type: Journal Article
• Authors: Colalongo, Luigi
• Is Part Of: Solid-state electronics. Volume 124(2016)
• Page Start: 1
• Page End: 4
• Publication Date: 2016-10
• Subjects: Computer-aided design (CAD) -- Indium gallium zinc oxide (IGZO) -- Thin-film transistor (TFT) -- Surface potential; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.07.023
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Surface-potential-based mathematical models are among the most accurate and physically based compact models of thin-film transistors, and in turn of indium gallium zinc oxide TFTs, available today. However, the need of iterative computations of the surface potential limits their computational efficiency and diffusion in CAD applications. The existing closed-form approximations of the surface potential are based on regional approximations and empirical smoothing functions that could result not accurate enough in particular to model transconductances and transcapacitances. In this work we present an extremely accurate (in the range of nV) and computationally efficient non-iterative approximation of the surface potential that can serve as a basis for advanced surface-potential-based indium gallium zinc oxide TFTs models.