High-performance logic transistor DC benchmarking toward 7 nm technology-node between III–V and Si tri-gate n-MOSFETs using virtual-source injection velocity model. (February 2016)

• Record Type: Journal Article
• Authors: Baek, Rock-Hyun; Kim, Jin Su; Kim, Do-Kywn; Kim, Taewoo; Kim, Dae-Hyun
• Is Part Of: Solid-state electronics. Volume 116(2016)
• Page Start: 100
• Page End: 103
• Publication Date: 2016-02
• Subjects: Virtual-Source -- Injection velocity -- ITRS -- Logic -- InGaAs; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.11.031
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We performed the virtual-source based analytical modeling for advanced InGaAs and Si tri-gate n-MOSFETs. We carried out the performance benchmarking for Si and InGaAs tri-gate n-MOSFETs at 7 nm technology-node. The 7 nm technology-node would require a significant improvement in the virtual source injection velocity and the electrostatic integrity. Abstract: Injection velocity ( vinj ) is a unique figure-of-merit that determines logic transistor ON-current ( I ON ) and switching delay (CV/ I ). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III–V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected I ON / I OFF ratio for the 7 nm technology node.