Reliability analysis of hybrid spin transfer torque magnetic tunnel junction/CMOS majority voters. (September 2016)

• Record Type: Journal Article
• Authors: Slimani, M.; Butzen, P.; Naviner, L.; Wang, Y.; Cai, H.
• Is Part Of: Microelectronics and reliability. Volume 64(2016)
• Page Start: 48
• Page End: 53
• Publication Date: 2016-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.07.074
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Majority voters are typically used in redundancy hardening techniques aiming to increase the reliability of nanoscale circuits. Besides, Spin Transfer Torque Magnetic Tunnel Junction (STT-MJT) has been identified as the most promising candidate for low power and high speed applications. In this paper, we present two majority voter circuits based on nanometer STT-MTJ. By using STMicroelectronics FDSOI 28 nm process and a precise STT-MTJ compact model, electrical simulations have been carried out to compare their performances and analyze their reliability. Both radiation sensitivity and variability have been investigated in the reliability-aware analysis. Highlights: We explain in details how we build the proposed majority voter designs (Section 1). We add figures and explanations in "Radiation sensitivity analysis" Section. We extend the "Reliability analysis" Section by considering variability analysis.