Fault isolation at P/N junction by nanoprober. (September 2016)

• Record Type: Journal Article
• Authors: Liu, Wan-Yi; Chiang, Chih-Feng; Yen, Chia-Hsiang; Lin, Rung-Jiun; Chang, Te-Fu; Chang, Shih-Hsin; Kuo, Pau-Sheng; Chu, Chih-Hsun
• Is Part Of: Microelectronics and reliability. Volume 64(2016)
• Page Start: 387
• Page End: 389
• Publication Date: 2016-09
• Subjects: AFM-based nanoprober -- Failure analysis -- Leakage -- TEM; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.07.081
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Precise location of leakage in a P-well/N-well junction has been identified by an AFM (atomic force microscope)-based nanoprober. In order to provide the accurate position of the failure for further analysis, a new method was proposed by combining nanoprobing I–V results on each P-well/N-well contact together with semi-empirical calculation to identify the possible leakage path. Further plan view TEM analysis confirms our result. Highlights: In this study, a FA case was successfully demonstrated to find the root cause by combining with different techniques. The authors have demonstrated how to narrow down the fail window with the help of nanoprobe and semi-empirical calculation. For advanced technology node, it is needed to include nanoprobe in the FA flow to increase the yield.