Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. (September 2016)

• Record Type: Journal Article
• Authors: Buffolo, M.; Meneghini, M.; De Santi, C.; Felber, H.; Renso, N.; Meneghesso, G.; Zanoni, E.
• Is Part Of: Microelectronics and reliability. Volume 64(2016)
• Page Start: 610
• Page End: 613
• Publication Date: 2016-09
• Subjects: LED -- Time-dependent dielectric breakdown -- GaN -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.07.103
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper reports the outcome of a series of reverse-bias experiments performed on commercial GaN-based green LEDs. The experimental results showed that green LEDs submitted to reverse bias i) show a time-dependent failure when they are submitted to constant (reverse) voltage stress, at a bias point smaller than the BDV; ii) experience an increase of the reverse-bias electro-luminescence signal, well-correlated with the increase of the reverse leakage current; iii) the TTF (Time-To-Failure) related to the time-dependent breakdown process has an exponential dependence on stress voltage; iv) the TTF is Weibull distributed. This work provides the first experimental demonstration of time-dependent failure of GaN LEDs. Highlights: Time-dependent failure of InGaN LEDs submitted to constant reverse bias was observed. Leakage current is correlated with reverse-bias electro-luminescence signal. The Time-To-Failure has an exponential dependence on stress voltage. The TTF was found to be Weibull distributed.