Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness. (September 2016)
- Record Type:
- Journal Article
- Title:
- Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness. (September 2016)
- Main Title:
- Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness
- Authors:
- Koutsoureli, M.
Zevgolatis, A.
Saada, S.
Mer-Calfati, C.
Michalas, L.
Papaioannou, G.
Bergonzo, P. - Abstract:
- Abstract: The present paper aims to provide a better insight to the dielectric charging phenomena of nano-crystalline diamond (NCD) films that are used in RF MEMS capacitive switches. The electrical properties of NCD films of various thicknesses are investigated with the aid of metal-insulator-metal (MIM) capacitors. The dominant conduction mechanisms have been identified by obtaining current-voltage characteristics in the temperature range from 300 K to 400 K and dielectric charging phenomena have been investigated by using thermally stimulated depolarization currents (TSDC) technique. The experimental results indicate a thermally activated conductivity for low electric field intensities while Hill-type conduction takes place for field intensities > 130 kV/cm. The conductivity as well as the defect density seems to increase with film thickness. Enhanced dielectric charging phenomena have been observed on thicker films and the injected charges are found to be trapped through the material's volume. These results indicate that thinner NCD films seem to be more promising for RF MEMS capacitive switches. Highlights: Dielectric charging and dominant conduction processes of NCD films are investigated. Conductivity and defect density seems to increase with film thickness. Enhanced dielectric charging phenomena have been observed on thicker films. The injected charges are found to be trapped through the material's volume.
- Is Part Of:
- Microelectronics and reliability. Volume 64(2016)
- Journal:
- Microelectronics and reliability
- Issue:
- Volume 64(2016)
- Issue Display:
- Volume 64, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 64
- Issue:
- 2016
- Issue Sort Value:
- 2016-0064-2016-0000
- Page Start:
- 660
- Page End:
- 664
- Publication Date:
- 2016-09
- Subjects:
- RF MEMS switches -- Reliability -- Dielectric charging -- Diamond -- Electrical properties
Electronic apparatus and appliances -- Reliability -- Periodicals
Miniature electronic equipment -- Periodicals
Appareils électroniques -- Fiabilité -- Périodiques
Équipement électronique miniaturisé -- Périodiques
Electronic apparatus and appliances -- Reliability
Miniature electronic equipment
Periodicals
621.3815 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00262714 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.microrel.2016.07.053 ↗
- Languages:
- English
- ISSNs:
- 0026-2714
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.979000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 7599.xml