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APA Citation
Landel, M., Gautier, C., Labrousse, D., & Lefebvre, S. (2016). [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. Microelectronics and reliability, 64, 560–565. http://access.bl.uk/ark:/81055/vdc_100041024802.0x00004c