Evaluation of potential-induced degradation in crystalline Si solar cells using Na fault injection. (September 2016)

• Record Type: Journal Article
• Authors: Oh, Wonwook; Kim, Junhee; Kang, Byungjun; Bae, Soohyun; Lee, Kyung Dong; Lee, Hae-Seok; Kim, Donghwan; Chan, Sung-Il
• Is Part Of: Microelectronics and reliability. Volume 64(2016)
• Page Start: 646
• Page End: 649
• Publication Date: 2016-09
• Subjects: Potential induced degradation -- Na fault injection -- PV modules -- p-Type crystalline solar cells; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.07.059
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Photovoltaic (PV) modules are exposed to high-voltage stress between grounded module frames and solar cells, a configuration called potential-induced degradation (PID). Since PID mainly depends on the solar cells used for module packaging, several steps for PID tests can be omitted. We carried out PID tests on the cell level with Na fault injection in accordance with IEC 62804 and examined the extent of PID with saturation current density ( J 02 ) extracted from I–V measurements in the dark. Na-fault injection is a reasonable means for performing PID tests on the cell level without module packaging. Highlights: We carried out potential induced degradation tests on the cell level with Na fault injection. We extracted J 02 from dark J-V, which was measured at both the cell and module levels. Na fault injection method is a reasonable means of performing PID tests on the cell level.