Cite
APA Citation
Lakhdhar, H., Labat, N., Curutchet, A., Defrance, N., Lesecq, M., De Jaeger, J., & Malbert, N. (2016). reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectronics and reliability, 64, 594–598. http://access.bl.uk/ark:/81055/vdc_100041024802.0x000038