Cite
APA Citation
Jahn, U., Musolino, M., Lähnemann, J., Dogan, P., Garrido, S. F., Wang, J. F., Xu, K., Cai, D., Bian, L. F., Gong, X. J., & Yang, H. (n.d.). the hydride vapor phase epitaxy of GaN on silicon covered by nanostructures. Semiconductor science and technology, 31, . http://access.bl.uk/ark:/81055/vdc_100036337899.0x00002e