Cite
HARVARD Citation
Jahn, U. et al. (n.d.). The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures. Semiconductor science and technology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Jahn, U. et al. (n.d.). The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures. Semiconductor science and technology. p. . [Online].