Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes. (27th April 2015)

• Record Type: Journal Article
• Authors: Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig
• Is Part Of: Semiconductor science and technology. Volume 30:Number 5(2015:May)
• Publication Date: 2015-04-27
• Subjects: ReRAM -- nanowire -- metallic filament; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/5/055019
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2 O3 /ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.