Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET. (September 2015)

• Record Type: Journal Article
• Authors: Ramesh, R.; Madheswaran, M.; Kannan, K.
• Is Part Of: Superlattices and microstructures. Volume 85(2015)
• Page Start: 418
• Page End: 432
• Publication Date: 2015-09
• Subjects: Gate engineering -- Gate all-around MOSFET -- Optical effects -- Schrödinger equation -- Quantum mechanical effects; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.06.010
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: Gate engineered gate stack MOSFET can be used for photodetector applications. It shows a good responsivity in the range 0.25–0.6 μm with peak responsivity at lambda = 0.4 μm. The increased high- k values with gate stack increases the photocurrent gain and responsivity of the device. Abstract: In this paper, 2D numerical modeling on the optical characteristics of a triple material gate stack gate all-around (TMGSGAA) MOSFET has been developed and presented. The device characteristics under illumination are obtained from the self-consistent solution of 2D Poisson–Schrödinger equation using Liebmann's iteration method. The drain and transfer characteristics, electric field, transconductance, photocurrent, photocurrent gain and responsivity of the device have been estimated. The effect of different high- k materials on the device characteristics under illumination has also been discussed. The numerical results are validated with ATLAS TCAD simulation results of the device under dark condition. The model is purely a physics based one and overcomes the major limitations of the existing models by providing more accurate results.