A new design approach to improve DC, analog/RF and linearity metrics of Vertical TFET for RFIC design. (October 2018)

• Record Type: Journal Article
• Authors: Seema, ; Chauhan, Sudakar Singh
• Is Part Of: Superlattices and microstructures. Volume 122(2018)
• Page Start: 286
• Page End: 295
• Publication Date: 2018-10
• Subjects: Device engineering -- Power dissipation -- Work-function; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.07.036
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: This paper presents a novel design of Vertical Tunnel Field Effect Transistor (VTFET) using work-function engineering. In this work, we investigate the impact of work-function engineering for the enhancement of the metrics such as DC, analog/RF and linearity parameters for the low-power, high-speed and high-frequency applications. Using this concept of device engineering, it is demonstrated that VTFET offers the superior improvement in terms of steeper subthreshold slope, S S = 26 m V / d e c a d e, which results in increase of ON-state current, reduction in D I B L = 25 m V / V and increment in ratio of I O N / I O F F of the order of 10 11 . Moreover, the appropriate selection of work-function for the source, gate and drain electrodes in metal electrodes work function engineering (MEWE) VTFET deals with the trade-off between analog/RF and linearity parameters. This device offers tremendous results in terms of analog/RF and linearity performance as comparison to conventional VTFET and also overcome the drawbacks like short-channel effects and hot-carrier effects. Highlights: A novel design of VTFET using work-function engineering is investigated for the enhancement of DC, analog/RF and linearity FOMs. Appropriate selection of work-function for the electrodes deals with the trade-off between analog/RF and linearity parameters. This device is the best alternative device to overcome the drawbacks like short-channel effects and hot-carrier effects.