A comparison of I-V characteristics of graphene silicon and graphene-porous silicon hybrid structures. (October 2018)

• Record Type: Journal Article
• Authors: Haditale, M.; Zabihipour, A.; Koppelaar, H.
• Is Part Of: Superlattices and microstructures. Volume 122(2018)
• Page Start: 387
• Page End: 393
• Publication Date: 2018-10
• Subjects: Semiconductors -- Microporous materials -- Microstructures -- Raman spectroscopy -- Electrical properties; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.07.005
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: A novel Graphene/Porous Silicon hybrid device is fabricated and its electrical behaviors are studied along with a Graphene/Silicon device. Graphene (G) is prepared by exfoliation of graphite foil in aqueous solution of inorganic salt. Porous Silicon (PS) is fabricated by electrochemical etching of p-type Si. Graphene is deposited on the surface of Si and PS substrates by the Thermal Spray Pyrolysis (TSP) method. The current-voltage relationships of G/Si and G/PS devices are derived and studied under different volumes of graphene. The results reveal that there are important differences in the I–V characteristics of G/Si and G/PS devices in the forward as well as reverse bias. Furthermore, varying the volume of graphene deposition on Si and PS substrates have contrary effects on their I–V characteristics. Highlights: A novel Graphene/Porous Silicon hybrid device is fabricated and its electrical behaviors are studied along with a Graphene/Silicon device. Graphene (G) is prepared by exfoliation of graphite foil in aqueous solution of inorganic salt. Porous Silicon (PS) is fabricated by electrochemical etching of p-type Si. Graphene is deposited on the surface of Si and PS substrates by the Thermal Spray Pyrolysis (TSP) method. The current-voltage relationships of G/Si and G/PS devices are derived and studied under different volumes of graphene. The results reveal that there are important differences in the I–V characteristics of G/Si and G/PS devices in the forward as well as reverse bias.