Response of plasmonic terahertz detectors to amplitude modulated signals. (September 2015)

• Record Type: Journal Article
• Authors: Rupper, Greg; Rudin, Sergey; Shur, Michael
• Is Part Of: Solid-state electronics. Volume 111(2015)
• Page Start: 76
• Page End: 79
• Publication Date: 2015-09
• Subjects: Terahertz detectors -- Semiconductor transistor -- Plasmonic regime; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.05.035
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The response of plasmonic HEMT to modulated signals in the terahertz range. The maximum modulation frequency is 1 THz for the above-threshold regime. The maximum modulation frequency is 0.6 THz for the below-threshold operations. The maximum modulation frequency is close to the bandwidth of the detector. Abstract: We present theoretical study of the response of two-dimensional gated electron gas to an amplitude modulated signals with carrier frequency in the terahertz range. The model is based on complete hydrodynamic equations, and includes effects of viscosity, pressure gradients and thermal transport in the conduction channel of a high electron mobility semiconductor transistor (HEMT). The modulation response was evaluated as a function of modulation frequency fM for a wide range of mobility values. Maximum modulation frequency fMAX was evaluated as a function of channel mobility, with typical values of fMAX in the subterahertz range of frequencies. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet all the requirements for applications as terahertz detectors and modulators in ultra high-speed wireless communication circuits.