Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories. (August 2016)

• Record Type: Journal Article
• Authors: Jiang, Ran; Han, Zuyin; Du, Xianghao
• Is Part Of: Microelectronics and reliability. Volume 63(2016)
• Page Start: 37
• Page End: 41
• Publication Date: 2016-08
• Subjects: RRAM -- Hafnium oxide -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.05.013
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Reliability/Uniformity of resistance switching in Ti/HfO2 /Pt memory structure was improved by inserting an interfacial layer of 5 nm-thick TiO2 between Ti and 45 nm-thick HfO2 . As a native oxide of Ti, TiO2, effectively limits the disorder migration of oxygen from HfO2 to Ti layer, and provides the more chemically-stable and morphologically-uniform interfaces with both the Ti electrode and the HfO2 layer. Meanwhile, more stable resistive switching was observed in Ti/TiO2 /HfO2 /Pt than that in Ti/HfO2 /Pt memory, and the random variation during endurance test observed in Ti/HfO2 /Pt was also greatly limited in Ti/TiO2 /HfO2 /Pt memory. From these results, a thin TiO2 insertion between the Ti electrode with the HfO2 active layer, could greatly improve the reliability/uniformity of the Ti/HfO2 /Pt memory devices. Highlights: Reliability of resistance switching was improved by inserting an TiO2 interfacial layer. TiO2 limits the disorder migration of oxygen and provides more chemically-stable interfaces. Random variation during endurance test was greatly limited in Ti/TiO2 /HfO2 /Pt memory.