Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory. (November 2015)

• Record Type: Journal Article
• Authors: Park, Sangyong; Choi, Seongwook; Jun, Kwang Sun; Kim, HuiJung; Rhee, SungMan; Park, Young June
• Is Part Of: Solid-state electronics. Volume 113(2015)
• Page Start: 144
• Page End: 150
• Publication Date: 2015-11
• Subjects: Charge trap memory -- SONOS -- Data retention -- Lifetime estimation -- Non-Arrhenius behavior -- Multiple activation energy; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.05.026
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Non-Arrhenius behavior has been reported in a various temperature range for the retention time of CT Flash memories. In order to understand the physical origin of the multiple activation energy due to the non-Arrhenius behavior, we conduct a simulation study using a 3D self-consistent numerical simulator developed in-house. As a result, it is found that both vertical and lateral charge transport in the conduction band of nitride layer are responsible for the non-Arrhenius retention characteristic. Also, the tunneling current through the bottom oxide and a lifetime criteria are turned out to be the key parameters which determine the multiple activation energy.