Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk. (November 2015)

• Record Type: Journal Article
• Authors: Carrillo-Nuñez, Hamilton; Luisier, Mathieu; Schenk, Andreas
• Is Part Of: Solid-state electronics. Volume 113(2015)
• Page Start: 61
• Page End: 67
• Publication Date: 2015-11
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.05.019
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Extremely narrow and bulk-like p-type InAs–Si nanowire TFETs are studied using (i) a full-band and atomistic quantum transport simulator based on the sp 3 d 5 s ∗ tight-binding model and (ii) a drift–diffusion TCAD tool. As (iii) option, a two-band model and the WKB approximation have been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs–Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.