Cite
HARVARD Citation
Bühler, R. et al. (2015). Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. Solid-state electronics. pp. 209-215. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Bühler, R. et al. (2015). Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. Solid-state electronics. pp. 209-215. [Online].