A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application. (January 2015)

• Record Type: Journal Article
• Authors: Li, Yang; Wang, Cong; Kim, Nam-Young
• Is Part Of: Solid-state electronics. Volume 103(2015)
• Page Start: 147
• Page End: 153
• Publication Date: 2015-01
• Subjects: Lumped elements -- Wilkinson power divider -- Integrated passive device -- GaAs substrate -- Reliability; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2014.08.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: High-performance and compact size Wilkinson power divider was presented. An optimized fabrication process was implemented on GaAs substrate. The proposed method further reduces fabrication time, cost and improve performances. Both the component and device have a stable and reliable performance. Abstract: This paper presents the design and implementation of a high-performance, compact Wilkinson power divider using an optimized integrated passive device fabrication process on a GaAs substrate for LTE application. Compared to the previous integrated passive device processes, this optimized fabrication process is developed to further reduce the fabrication time and total fabrication cost and to greatly increase the RF performances. The optimized processes are demonstrated and several key parameters are compared for the previous process and optimized process in detail. A Wilkinson power divider is realized using this proposed manufacturing process and is packaged using the SOT-26 packaging method, which shows excellent RF performances with a compact size and low cost. The bare-chip measurement results show two insertion losses below 3.35 dB/3.40 dB, all return losses of greater than 15.20 dB and an isolation of greater than 38.00 dB. The measured insertion losses for the packaged power divider are better than 3.50 dB/3.50 dB, all return losses of greater than 13.50 dB and an isolation of greater than 26.20 dB around the desired frequency. The operating frequency is between 2.24 GHz and 2.40 GHz, which is the LTE application frequency range of band 40. The reliability of the MIM capacitor and power divider is investigated by using a highly accelerated stress test, which results indicate that both the component and device fabricated by the optimized process have a stable and reliable performance.