Cite
HARVARD Citation
Park, J. et al. (2018). Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress. Solid-state electronics. pp. 20-26. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Park, J. et al. (2018). Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress. Solid-state electronics. pp. 20-26. [Online].