Cite
HARVARD Citation
Doherty, J. et al. (2018). Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires. Journal of materials chemistry. 6 (32), pp. 8738-8750. [Online].
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Doherty, J. et al. (2018). Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires. Journal of materials chemistry. 6 (32), pp. 8738-8750. [Online].