NO removal efficiency of high-yield carbon nitride irradiated under various light sources. (January 2018)
- Record Type:
- Journal Article
- Title:
- NO removal efficiency of high-yield carbon nitride irradiated under various light sources. (January 2018)
- Main Title:
- NO removal efficiency of high-yield carbon nitride irradiated under various light sources
- Authors:
- Lu, Zhenzhen
Liu, Dong
Yang, Zhiyuan
Zhou, Jianting - Abstract:
- Abstract: Graphitic carbon nitride (g-C3 N4 ) is a well-known photocatalyst. In this work, the NO removal efficiency of g-C3 N4 irradiated under various light sources is explored. For achieving high productivity and activity photocatalyst, the pyrolysis temperature is adjusted from 450 °C to 600 °C. All prepared g-C3 N4 are put into a transparent reaction box one by one to remove the NO with the initial concentration of 1000 ppb level in air flow under real indoor illumination of three light resources: metal halide lamp, LED lamp and high pressure sodium lamp. According to the photocatalytic reaction results, the NO removal ratio of g-C3 N4 synthesized under 500 °C can reach to 29.26% under the irradiation of metal halide lamp, overwhelming that of g-C3 N4 irradiated under other light sources. Several characterization methods were adopt to analyze the photocatalytic reaction mechanism and the micro structures of g-C3 N4 prepared from melamine. Because of the conduction band potential difference between g-C3 N4 and melem, heterojunction of melem and g-C3 N4 can form the convention-type charge transfer, which greatly reduce the combination ratio of photogenerated electrons and holes, thus enhance the photocatalytic activity of g-C3 N4 under the irradiation of metal halide lamp indicating why the g-C3 N4 synthesized under 500 °C possesses the best NO removal efficiency among these samples. In addition, compared with other lamps, metal halide lamp is proved to be the mostAbstract: Graphitic carbon nitride (g-C3 N4 ) is a well-known photocatalyst. In this work, the NO removal efficiency of g-C3 N4 irradiated under various light sources is explored. For achieving high productivity and activity photocatalyst, the pyrolysis temperature is adjusted from 450 °C to 600 °C. All prepared g-C3 N4 are put into a transparent reaction box one by one to remove the NO with the initial concentration of 1000 ppb level in air flow under real indoor illumination of three light resources: metal halide lamp, LED lamp and high pressure sodium lamp. According to the photocatalytic reaction results, the NO removal ratio of g-C3 N4 synthesized under 500 °C can reach to 29.26% under the irradiation of metal halide lamp, overwhelming that of g-C3 N4 irradiated under other light sources. Several characterization methods were adopt to analyze the photocatalytic reaction mechanism and the micro structures of g-C3 N4 prepared from melamine. Because of the conduction band potential difference between g-C3 N4 and melem, heterojunction of melem and g-C3 N4 can form the convention-type charge transfer, which greatly reduce the combination ratio of photogenerated electrons and holes, thus enhance the photocatalytic activity of g-C3 N4 under the irradiation of metal halide lamp indicating why the g-C3 N4 synthesized under 500 °C possesses the best NO removal efficiency among these samples. In addition, compared with other lamps, metal halide lamp is proved to be the most suitable light resource to motivate g-C3 N4 because of its relatively concentrated light intensity. The present work provide us new perspectives for selecting suitable light resources and proper synthesis conditions for the generation of g-C3 N4 to achieve better air purification performance in tunnels and indoors. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 73(2018)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 73(2018)
- Issue Display:
- Volume 73, Issue 2018 (2018)
- Year:
- 2018
- Volume:
- 73
- Issue:
- 2018
- Issue Sort Value:
- 2018-0073-2018-0000
- Page Start:
- 83
- Page End:
- 91
- Publication Date:
- 2018-01
- Subjects:
- G-C3N4 -- Band gap -- Metal halide lamp -- Melem -- Typical diffraction peak -- Photocatalysis
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2017.05.016 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
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