Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism. Issue 27 (26th June 2018)

• Record Type: Journal Article
• Authors: Wang, Ruiling; Xie, Tian; Zhang, Tong; Pu, Taofei; Bu, Yuyu; Ao, Jin-Ping
• Is Part Of: Journal of materials chemistry. Volume 6:Issue 27(2018)
• Page Start: 12956
• Page End: 12961
• Publication Date: 2018-06-26
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c8ta02916d
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : FTO–BiVO4 –W–WO3 photoanode is fabricated in this study. Abstract : FTO–BiVO4 –W–WO3 photoanode is fabricated in this study. A Z-scheme photocarrier transfer route can form in the composite photoanode and a photocurrent density of 5 mA cm −2 under visible light (100 mW cm −2 ) can be achieved. In addition, a WO3 layer covers the surface of BiVO4, improving the stability of the photoelectrochemical performance.