Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism. Issue 27 (26th June 2018) - Wang, Ruiling
Abstract : FTO–BiVO4 –W–WO3 photoanode is fabricated in this study. Abstract : FTO–BiVO4 –W–WO3 photoanode is fabricated in this study. A Z-scheme photocarrier transfer route can form in the composite photoanode and a photocurrent density of 5 mA cm −2 under visible light (100 mW cm −2 ) can be achieved. In addition, a WO3 layer covers the surface of BiVO4, improving the stability of the photoelectrochemical performance.