Self-assembled patches in PtSi/n-Si (111) diodes. (May 2018)

• Record Type: Journal Article
• Authors: Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.
• Is Part Of: Journal of semiconductors. Volume 39:Number 5(2018:May)
• Publication Date: 2018-05
• Subjects: Schottky barrier diode (SBD) -- temperature dependence -- self-assembled patches -- temperature dependence -- PtSi/n-Si (111) -- C–V characteristics -- quantum wells; 4320J; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/39/5/054002
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Using the effect of the temperature on the capacitance–voltage ( C–V ) and conductance–voltage ( G/ω–V ) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration ( N Dapp ), the potential difference between the Fermi energy level and the bottom of the conduction band ( V n ), apparent barrier height ( Φ Bapp ), series resistance ( R s ) and the interface state density N ss have been investigated. From the temperature dependence of ( C–V ) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).