Cite
HARVARD Citation
Jiang, K. et al. (2018). The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition. CrystEngComm. 20 (19), pp. 2720-2728. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Jiang, K. et al. (2018). The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition. CrystEngComm. 20 (19), pp. 2720-2728. [Online].