Damage-free highly efficient polishing of single-crystal diamond wafer by plasma-assisted polishing. Issue 1 (2018)

• Record Type: Journal Article
• Authors: Yamamura, K.; Emori, K.; Sun, R.; Ohkubo, Y.; Endo, K.; Yamada, H.; Chayahara, A.; Mokuno, Y.
• Is Part Of: CIRP annals. Volume 67:Issue 1(2018)
• Page Start: 353
• Page End: 356
• Publication Date: 2018
• Subjects: Polishing -- Single crystal -- Surface integrity; Production engineering -- Research -- Periodicals; 670.5
• DOI: 10.1016/j.cirp.2018.04.074
• Languages: English
• ISSNs: 0007-8506

Abstract

Abstract: Single-crystal diamond (SCD) is considered to be an ideal material for next-generation power devices. Plasma-assisted polishing (PAP) without using an abrasive was applied to polish SCD fabricated by chemical vapor deposition. Argon-based plasma containing water vapour was used in the PAP to modify the surface of polishing plate and SCD (100), and SCD was polished under a polishing pressure ranging from 10 to 52.6 kPa. Raman spectroscopy measurement showed that there was no residual stress on the polished SCD surface, and a polishing rate of 2.1 μm/h and a surface roughness of 0.13 nm Sq were obtained.