Terahertz response of a field-effect transistor loaded with a reactive component. (August 2018)

• Record Type: Journal Article
• Authors: Mammeri, Abdel Majid; Mahi, Fatima Zohra; Marinchio, Hugues; Palermo, Cristophe; Varani, Luca
• Is Part Of: Solid-state electronics. Volume 146(2018)
• Page Start: 21
• Page End: 27
• Publication Date: 2018-08
• Subjects: Field-effect transistor -- TeraHertz frequency (THz) -- Voltage gain -- Resonant circuit -- Plasma oscillations; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.04.010
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We present the Terahertz response of FET connected to reactive componants. The model using the equivalent admittances calculated in our previous article: IEEE Transactions on Terahertz Science and Technology, vol. 5, NO. 4 (2015). The results present the voltage gain spectrum of differents case of reactive FET. The discussion leads to determine the possibilities of shifting, amplifying or softening resonances appearing in the voltage gain spectrum. The analysis of transistor resonances can be used in FETs rectenna applications. Abstract: A study of the small-signal response of a Field-Effect Transistor connected to a purely reactive load is proposed. In particular, this model, using the equivalent admittances approach, is applied to a transistor connected to an inductance L, a capacitance C and LC resonant and anti-resonant circuits. The influence of such frequency-dependent load on the dynamics of the transistor, dominated in the terahertz range by collective plasma behavior, is investigated. This leads to the possibilities of shifting, amplifying or softening resonances appearing in the voltage gain spectrum. The effect of a resistive part of the load is also estimated.