Digital and analog TFET circuits: Design and benchmark. (August 2018)

• Record Type: Journal Article
• Authors: Strangio, S.; Settino, F.; Palestri, P.; Lanuzza, M.; Crupi, F.; Esseni, D.; Selmi, L.
• Is Part Of: Solid-state electronics. Volume 146(2018)
• Page Start: 50
• Page End: 65
• Publication Date: 2018-08
• Subjects: Tunnel-FET -- TCAD -- Simulation -- Digital circuits -- Analog circuits; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.05.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We report simulations of basic analog and digital circuit blocks employing tunnel-FETs. Template III-V heterojunction tunnel-FETs are benchmarked against silicon FinFETs for the 10 nm node. Performance are evaluated down to VDD = 200 mV. Tunnel-FETs result advantageous with respect to silicon FinFET for VDD below approximately 400 mV. Abstract: In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD ) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p - and n -type transistors, the results show clear advantages of TFET technology over FinFET for VDD lower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions.