Cite
HARVARD Citation
Hwang, I. et al. (2018). High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON. Physica status solidi. 215 (10), p. n/a. [Online].
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Hwang, I. et al. (2018). High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON. Physica status solidi. 215 (10), p. n/a. [Online].