High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON. Issue 10 (14th November 2017)

• Record Type: Journal Article
• Authors: Hwang, Il‐Hwan; Eom, Su‐Keun; Choi, Gwang‐Ho; Kang, Myoung‐Jin; Lee, Jae‐Gil; Cha, Ho‐Young; Seo, Kwang‐Seok
• Other Names: Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 10(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-14
• Subjects: AlGaN -- GaN -- high electron mobility transistors -- high‐k material -- metal–insulator–semiconductor structures -- power devices; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700650
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A high‐performance E‐mode AlGaN/GaN MIS‐HEMTs is fabricated with atomic layer deposited 5 nm SiON/16 nm HfON and with atomic layer deposited 22 nm HfON gate insulator and their characteristics are compared. Plasma nitridation is employed in every atomic layer deposition cycle to deposit SiON and HfON dielectrics. SiON is used as an interfacial layer to ensure a high‐quality AlGaN/dielectric interface, and high‐k HfON is employed to realize a large transconductance, a high on‐state current, and a high on/off current ratio. The E‐mode AlGaN/GaN MIS‐HEMT with 5 nm SiON/16 nm HfON exhibited more excellent DC and dynamic characteristics than that with 22 nm HfON. The fabricated MIS‐HEMT with dual gate insulator showed a high on/off ratio of ≈1.2 × 10 11, a low off‐state drain leakage current less than 10 −11 A mm −1, a threshold voltage of 1.1 V, a subthreshold slope of 77 mV dec −1, a specific on‐resistance of 1.34 mΩ cm 2, and a breakdown voltage of 800 V. Abstract : A high‐performance E‐mode AlGaN/GaN MIS‐HEMTs is fabricated with atomic layer deposited 5 nm SiON/16 nm HfON. Plasma nitridation is employed in every atomic layer deposition cycle to deposit SiON and HfON dielectrics. SiON is used as an interfacial layer to ensure a high‐quality AlGaN/dielectric interface, and high‐k HfON is employed to realize a large transconductance, a high on‐state current, and a high on/off current ratio.