Oxide-based thin film transistors for flexible electronics *Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162). (January 2018)

• Record Type: Journal Article
• Authors: He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing
• Is Part Of: Journal of semiconductors. Volume 39:Number 1(2018:Jan.)
• Publication Date: 2018-01
• Subjects: thin film transistors -- flexible electronics -- oxide semiconductor; 2520E; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/39/1/011005
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends.